weitron http://www.weitron.com.tw BSS84W rating symbol unit v gs i d p d r ja 20 130 225 556 operating junction temperature range storage temperature range t j tstg c v mw c/w g at e-source voltage thermal resistance ? junction?to?ambient device marking BSS84W = pd p-channel power mosfet features: * simple drive requirement * small package outline description: * these miniature surface mount mosfets reduce power loss conserve energy, making this device ideal for use in small power management circuitry. typical applications are dc?dc converters, load switching, power management in portable and battery?powered products such as computers, printers, cellular and cordless telephones. c maximum lead temperature for soldering purposes, for 10 seconds t l 260 c 1 2 3 drain-source voltage v dds 50 v lea d(pb)-free p b continuous drain current v gs = (t a =25c) ma i dm 520 ma pulsed drain current (tp <=10s) maximum ratings (t a =25c unless otherwise specified) 1/5 20-sep-2010 sot-323(sc-70) 1 2 source 3 drain gate -55 to +150 value total power dissipation (t a =25c) -55 to +150
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w BSS84W pf electrical characteristics (t a =25c unless otherwise noted) 2. switching characteristics are independent of operating junction temperature. turn-on delay time v dd =-15v, i d =-2.5a, r l =50 ? reverse transfer capacitance v ds =5.0v t d(on) switching 2 output capacitance v ds =5.0v input capacitance v ds =5.0v 30 dynamic drain-source breakdown voltage v gs =0v, i d =250a gate?source threaded voltage v ds =v gs , i d =1.0ma gate-body leakage current v gs =20v, v zero gate voltage drain current v ds =25v, v gs =0 v ds =50v, v gs =0 static drain-source on-resistance v gs =5.0v, i d =100ma transfer admittance v ds =25v, i d =100ma, f = 1.0khz static 2/5 20-sep-2010 v ds =50v, v gs =0, t j = 125c) - - 60 ds =0 ? - - - turn-off delay time v dd =-15v, i d =-2.5a, r l =50 ? t d(off) c h a r a c t e r i s t i c s y m b o l u n i t m i n t y p m a x v ( b r ) d s s v gs (th) r ds ( on ) i gss i dss ly l fs c iss c oss c rss 50 - v 0.8 2.0 v - - - - - - - 0.1 15 a a ms 5.0 10 10 5.0 - - ns 2.5 16 - - 50 - - - - - - - 60 rise time fall time t r t f - - - - 1.0 8.0 v dd =-15v, i d =-2.5a, r l =50 ? v dd =-15v, i d =-2.5a, r l =50 ? gate charge q t 6000 - - pc i s i sm v sd 0.520 2.5 - - - a forward voltage (note 2.) pulsed current continuous current 0.130 sourceCdrain diode - - - v
weitron http://www.weitron.com.tw BSS84W 3/5 20-sep-2010 typical electrical chara cteristics figure 1. transfer characteristics figure 2. on?region characteristics figure 3. on?resistance versus drain current figure 4. on?resistance versus drain current
weitron http://www.weitron.com.tw BSS84W 4/5 20-sep-2010 figure 5. on?resistance variation with temperature figure 6. gate charge typi ca l electrical character istics figure 7. body diode forward voltage
BSS84W weitron http://www.weitron.com.tw sot-323 outline demensions a b d e g m l h j t op v ie w k c dim a b c d e g h j k l m min 0.30 1.15 2.00 - 0.30 1.20 1.80 0.00 0.80 0.42 0.10 max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 5/5 20-sep-2010 unit:mm sot-323
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